POWER SEMI-CONDUCTOR DRIVES

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Power semiconductor devices constitute the heart of modern power electronic apparatus.
They are used in power electronic converters in the form of a matrix of on-off switches, and help
to convert power from ac-to-dc (rectifier), dc-to-dc (chopper), dc-to-ac (inverter), and ac-to-ac at
the same (ac controller) or different frequencies (cycloconverter). The switching mode power
conversion gives high efficiency, but the disadvantage is that due to the nonlinearity of switches,
harmonics are generated at both the supply and load sides. The switches are not ideal, and they
have conduction and turn-on and turn-off switching losses.

Converters are widely used in appli-cations such as heating and lighting controls, ac and dc power supplies, electrochemical pro-cesses, dc and ac motor drives, static VAR generation, active harmonic filtering, etc. Although the cost of power semiconductor devices in power electronic equipment may hardly exceed
20–30 percent, the total equipment cost and performance may be highly influenced by the char-
acteristics of the devices. An engineer designing equipment must understand the devices and
their characteristics thoroughly in order to design efficient, reliable, and cost-effective systems
with optimum performance.

It is interesting to note that the modern technology evolution in
power electronics has generally followed the evolution of power semiconductor devices. The
advancement of microelectronics has greatly contributed to the knowledge of power device
materials, processing, fabrication, packaging, modeling, and simulation.
Today’s power semiconductor devices are almost exclusively based on silicon material and
can be classified as follows:
• Diode
• Thyristor or silicon-controlled rectifier (SCR)
• Triac  

• Gate turn-off thyristor (GTO)
• Bipolar junction transistor (BJT or BPT)
• Power MOSFET
• Static induction transistor (SIT)
• Insulated gate bipolar transistor (IGBT)
• MOS-controlled thyristor (MCT)
• Integrated gate-commutated thyristor (IGCT)
In this chapter, we will briefly study the operational principles and characteristics of these
devices.

 
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